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CLASS
Code:
0112/2///61360_4#AFA015
Version:
001
Revision:
05
IRDI:
0112/2///61360_4#AFA015#001
Preferred name:
insulated-gate bipolar transistor
Synonymous name:
Coded name:
Short name:
Definition:
transistor having a conduction channel and a PN junction, of which the currents flowing through the channel and the junction are controlled by an electric field resulting from a voltage applied between the gate and emitter terminals
Note:
Remark:
Definition source:
IEC 60747-9:2007
Drawing:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
Superclass:
0112/2///61360_4#AAA118
Higher level classes:
Classifying DET:
Properties:
Properties:
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
.....
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
0112/2///61360_4#AFD060 - collector current (pulse)
0112/2///61360_4#AFD061 - collector-emitter power dissipation
0112/2///61360_4#AFD062 - collector-emitter cutoff current
0112/2///61360_4#AFD063 - gate-emitter leakage current
0112/2///61360_4#AFD064 - collector-emitter saturation voltage
0112/2///61360_4#AFD065 - gate-emitter threshold voltage
0112/2///61360_4#AFD066 - fall time
0112/2///61360_4#AFD067 - collector-emitter voltage
0112/2///61360_4#AFD068 - turn-on delay time
0112/2///61360_4#AFD069 - turn-on time
0112/2///61360_4#AFD070 - rise time
0112/2///61360_4#AFD071 - input capacitance
0112/2///61360_4#AFD072 - turn-off time
0112/2///61360_4#AFD073 - reverse recovery time
0112/2///61360_4#AFD074 - thermal resistance(IGBT area)
0112/2///61360_4#AFD075 - thermal resistance(FRD area)
Properties tree:
Open all
|
Close all
Inherited properties:
Inherited properties:
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
.....
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAF275 - junction stress temperature
SuperBlocks:
Is case of:
Imported properties:
Instance sharable:
true
Status level:
Standard
Is deprecated:
Published in:
Published by:
IEC
Proposal date:
2023-04-17
Version initiation date:
Version release date:
2013-04-24
Revision release date:
2023-04-17
Obsolete date:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
Version history:
Version history:
001-05 (2023-11-22 13:39:06)
standard
CLASSE
Code:
0112/2///61360_4#AFA015
Version:
001
Révision:
05
IRDI:
0112/2///61360_4#AFA015#001
Nom préféré:
Nom synonyme:
Nom codé:
Nom court:
Définition:
Note:
Remarque:
Traducteur:
Version de traduction:
Date de traduction:
Source de définition:
IEC 60747-9:2007
Dessin:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
Superclasse:
0112/2///61360_4#AAA118
Classes supérieures:
DET de classification:
Propriétés:
Propriétés:
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
.....
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
0112/2///61360_4#AFD060 - collector current (pulse)
0112/2///61360_4#AFD061 - collector-emitter power dissipation
0112/2///61360_4#AFD062 - collector-emitter cutoff current
0112/2///61360_4#AFD063 - gate-emitter leakage current
0112/2///61360_4#AFD064 - collector-emitter saturation voltage
0112/2///61360_4#AFD065 - gate-emitter threshold voltage
0112/2///61360_4#AFD066 - fall time
0112/2///61360_4#AFD067 - collector-emitter voltage
0112/2///61360_4#AFD068 - turn-on delay time
0112/2///61360_4#AFD069 - turn-on time
0112/2///61360_4#AFD070 - rise time
0112/2///61360_4#AFD071 - input capacitance
0112/2///61360_4#AFD072 - turn-off time
0112/2///61360_4#AFD073 - reverse recovery time
0112/2///61360_4#AFD074 - thermal resistance(IGBT area)
0112/2///61360_4#AFD075 - thermal resistance(FRD area)
Propriétés:
Open all
|
Close all
Propriétés héritées:
Propriétés héritées:
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
.....
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
Imported properties:
Instance sharable:
true
Statut:
Standard
Is deprecated:
Publié dans:
Publié par:
IEC
Date de proposition:
2023-04-17
Version, date d'initialisation:
Version, date de publication:
2013-04-24
Revision release date:
2023-04-17
Date d'obsolescence:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
Historique:
Historique:
001-05 (2023-11-22 13:39:06)
standard
KLASSE
Code:
0112/2///61360_4#AFA015
Version:
001
Revision:
05
IRDI:
0112/2///61360_4#AFA015#001
Bevorzugter Name:
Synonym:
Code:
Kurzbezeichnung:
Definition:
Notiz:
Bemerkung:
Übersetzer:
Übersetzung, Revision:
Übersetzung, Revisionsdatum:
Quelle der Definition:
IEC 60747-9:2007
Zeichnung:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
Oberbegriff:
0112/2///61360_4#AAA118
Übergeordnete Klassen:
Klassifizierendes Datenelement:
Merkmale:
Merkmale:
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
.....
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
0112/2///61360_4#AFD060 - collector current (pulse)
0112/2///61360_4#AFD061 - collector-emitter power dissipation
0112/2///61360_4#AFD062 - collector-emitter cutoff current
0112/2///61360_4#AFD063 - gate-emitter leakage current
0112/2///61360_4#AFD064 - collector-emitter saturation voltage
0112/2///61360_4#AFD065 - gate-emitter threshold voltage
0112/2///61360_4#AFD066 - fall time
0112/2///61360_4#AFD067 - collector-emitter voltage
0112/2///61360_4#AFD068 - turn-on delay time
0112/2///61360_4#AFD069 - turn-on time
0112/2///61360_4#AFD070 - rise time
0112/2///61360_4#AFD071 - input capacitance
0112/2///61360_4#AFD072 - turn-off time
0112/2///61360_4#AFD073 - reverse recovery time
0112/2///61360_4#AFD074 - thermal resistance(IGBT area)
0112/2///61360_4#AFD075 - thermal resistance(FRD area)
Merkmale:
Open all
|
Close all
Übernommene Merkmale:
Übernommene Merkmale:
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
.....
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
Imported properties:
Instance sharable:
true
Status:
Standard
Is deprecated:
Veröffentlicht in:
Veröffentlicht von:
IEC
Datum des Vorschlags:
2023-04-17
Version, Veranlassungsdatum:
Version, Freigabedatum:
2013-04-24
Revision release date:
2023-04-17
Gestrichen seit:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
Historie:
Historie:
001-05 (2023-11-22 13:39:06)
standard
分類(クラス)
識別コード:
0112/2///61360_4#AFA015
改訂版:
001
修正刷:
05
IRDI:
0112/2///61360_4#AFA015#001
推奨名:
別名:
コード化された名称:
略称:
定義:
注記:
備考:
翻訳者:
翻訳第 m 版:
翻訳版発行日:
定義出典:
IEC 60747-9:2007
図:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
上位分類:
0112/2///61360_4#AAA118
上位クラス:
分類プロパティ:
プロパティ:
プロパティ:
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
.....
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
0112/2///61360_4#AFD060 - collector current (pulse)
0112/2///61360_4#AFD061 - collector-emitter power dissipation
0112/2///61360_4#AFD062 - collector-emitter cutoff current
0112/2///61360_4#AFD063 - gate-emitter leakage current
0112/2///61360_4#AFD064 - collector-emitter saturation voltage
0112/2///61360_4#AFD065 - gate-emitter threshold voltage
0112/2///61360_4#AFD066 - fall time
0112/2///61360_4#AFD067 - collector-emitter voltage
0112/2///61360_4#AFD068 - turn-on delay time
0112/2///61360_4#AFD069 - turn-on time
0112/2///61360_4#AFD070 - rise time
0112/2///61360_4#AFD071 - input capacitance
0112/2///61360_4#AFD072 - turn-off time
0112/2///61360_4#AFD073 - reverse recovery time
0112/2///61360_4#AFD074 - thermal resistance(IGBT area)
0112/2///61360_4#AFD075 - thermal resistance(FRD area)
プロパティ:
Open all
|
Close all
継承プロパティ:
継承プロパティ:
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
.....
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
Imported properties:
Instance sharable:
true
状態:
標準
Is deprecated:
公開:
公開者:
IEC
提案日時:
2023-04-17
初版作成日:
改訂版公開日:
2013-04-24
Revision release date:
2023-04-17
廃用期日:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
版改訂履歴:
版改訂履歴:
001-05 (2023-11-22 13:39:06)
standard
类
代码:
0112/2///61360_4#AFA015
版本号:
001
修订号:
05
IRDI:
0112/2///61360_4#AFA015#001
推荐名:
同义名:
代码名:
短名:
定义:
注释:
备注:
Translator (to be translated in Chinese):
Translation revison (to be translated in Chinese):
Translation revision date (to be translated in Chinese):
定义来源:
IEC 60747-9:2007
图:
类类型:
ITEM_CLASS
适用文档:
Class value assignment:
特性的必要性:
超类:
0112/2///61360_4#AAA118
上层类:
分类DET:
特性:
特性:
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
.....
0112/2///61360_4#AFD055 - number of transistors
0112/2///61360_4#AFD056 - main material
0112/2///61360_4#AFD057 - channel type
0112/2///61360_4#AFD058 - gate-emitter voltage
0112/2///61360_4#AFD059 - collector current (DC)
0112/2///61360_4#AFD060 - collector current (pulse)
0112/2///61360_4#AFD061 - collector-emitter power dissipation
0112/2///61360_4#AFD062 - collector-emitter cutoff current
0112/2///61360_4#AFD063 - gate-emitter leakage current
0112/2///61360_4#AFD064 - collector-emitter saturation voltage
0112/2///61360_4#AFD065 - gate-emitter threshold voltage
0112/2///61360_4#AFD066 - fall time
0112/2///61360_4#AFD067 - collector-emitter voltage
0112/2///61360_4#AFD068 - turn-on delay time
0112/2///61360_4#AFD069 - turn-on time
0112/2///61360_4#AFD070 - rise time
0112/2///61360_4#AFD071 - input capacitance
0112/2///61360_4#AFD072 - turn-off time
0112/2///61360_4#AFD073 - reverse recovery time
0112/2///61360_4#AFD074 - thermal resistance(IGBT area)
0112/2///61360_4#AFD075 - thermal resistance(FRD area)
特性树:
Open all
|
Close all
Inherited properties:
Inherited properties:
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
.....
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
输入特性:
Instance sharable:
true
状态级别:
Standard (to be translated)
Is deprecated:
发布:
发布者:
IEC
提议日期:
2023-04-17
版本生成日期:
版本发布日期:
2013-04-24
修订发布日期:
2023-04-17
废止日期:
负责委员会:
IEC/SC 3D
变更请求号:
C00146
版本历史:
版本历史:
001-05 (2023-11-22 13:39:06)
standard
Version history
Historique
Historie
版改訂履歴:
版本历史:
001-05 (2023-11-22 13:39:06)
standard
.....
001-04 (2023-04-17 09:58:37 by BATCH 00001245)
superseded
001-03 (2015-01-20 15:48:50 by BATCH 00000890)
superseded
001-02 (2014-10-16 16:38:21 by BATCH 00000879)
superseded
001-01 (2013-01-18 14:54:26 by BATCH 00000812)
superseded
Web page created
2024-05-02
Copyright ©
2024
IEC
, Geneva, Switzerland. All rights reserved