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CLASS
Code:
0112/2///61360_4#AAA136
Version:
001
Revision:
05
IRDI:
0112/2///61360_4#AAA136#001
Preferred name:
reverse blocking thyristor
Synonymous name:
reverse blocking
Coded name:
Short name:
RVB
Definition:
unidirectional thyristor that switch for positive anode voltages and exhibits a reverse blocking state for negative anode voltages
Note:
Remark:
Definition source:
Drawing:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
Superclass:
0112/2///61360_4#AAA133
Higher level classes:
0112/2///61360_4#AAA131 - trigger device
Classifying DET:
Properties:
Properties:
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
.....
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
0112/2///61360_4#AAE751 - anode-gate to anode voltage
Properties tree:
Open all
|
Close all
Inherited properties:
Inherited properties:
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
.....
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE724 - trigger device function
0112/2///61360_4#AAE728 - rms on-state current
0112/2///61360_4#AAE729 - repetitive peak on-state current
0112/2///61360_4#AAE730 - non-rep peak on-state current
0112/2///61360_4#AAE732 - gate trigger current
0112/2///61360_4#AAE738 - off-state voltage
0112/2///61360_4#AAE739 - repetitive peak off-state voltage
0112/2///61360_4#AAE740 - rate of rise of off-state voltage
0112/2///61360_4#AAE742 - gate trigger voltage
0112/2///61360_4#AAE743 - thyristor function
0112/2///61360_4#AAE744 - average on-state current
0112/2///61360_4#AAF135 - off-state current
0112/2///61360_4#AAF136 - holding current
0112/2///61360_4#AAF137 - latching current
0112/2///61360_4#AAF275 - junction stress temperature
SuperBlocks:
Is case of:
Imported properties:
Instance sharable:
true
Status level:
Standard
Is deprecated:
Published in:
IEC 61360-4
Published by:
IEC
Proposal date:
2023-04-17
Version initiation date:
2010-11-11
Version release date:
2010-11-11
Revision release date:
2023-04-17
Obsolete date:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
Version history:
Version history:
001-05 (2023-11-22 13:40:01)
standard
CLASSE
Code:
0112/2///61360_4#AAA136
Version:
001
Révision:
05
IRDI:
0112/2///61360_4#AAA136#001
Nom préféré:
Nom synonyme:
Nom codé:
Nom court:
Définition:
Note:
Remarque:
Traducteur:
Version de traduction:
Date de traduction:
Source de définition:
Dessin:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
Superclasse:
0112/2///61360_4#AAA133
Classes supérieures:
0112/2///61360_4#AAA131 - trigger device
DET de classification:
Propriétés:
Propriétés:
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
.....
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
0112/2///61360_4#AAE751 - anode-gate to anode voltage
Propriétés:
Open all
|
Close all
Propriétés héritées:
Propriétés héritées:
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
.....
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE724 - trigger device function
0112/2///61360_4#AAE728 - rms on-state current
0112/2///61360_4#AAE729 - repetitive peak on-state current
0112/2///61360_4#AAE730 - non-rep peak on-state current
0112/2///61360_4#AAE732 - gate trigger current
0112/2///61360_4#AAE738 - off-state voltage
0112/2///61360_4#AAE739 - repetitive peak off-state voltage
0112/2///61360_4#AAE740 - rate of rise of off-state voltage
0112/2///61360_4#AAE742 - gate trigger voltage
0112/2///61360_4#AAE743 - thyristor function
0112/2///61360_4#AAE744 - average on-state current
0112/2///61360_4#AAF135 - off-state current
0112/2///61360_4#AAF136 - holding current
0112/2///61360_4#AAF137 - latching current
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
Imported properties:
Instance sharable:
true
Statut:
Standard
Is deprecated:
Publié dans:
IEC 61360-4
Publié par:
IEC
Date de proposition:
2023-04-17
Version, date d'initialisation:
2010-11-11
Version, date de publication:
2010-11-11
Revision release date:
2023-04-17
Date d'obsolescence:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
Historique:
Historique:
001-05 (2023-11-22 13:40:01)
standard
KLASSE
Code:
0112/2///61360_4#AAA136
Version:
001
Revision:
05
IRDI:
0112/2///61360_4#AAA136#001
Bevorzugter Name:
Synonym:
Code:
Kurzbezeichnung:
Definition:
Notiz:
Bemerkung:
Übersetzer:
Übersetzung, Revision:
Übersetzung, Revisionsdatum:
Quelle der Definition:
Zeichnung:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
Oberbegriff:
0112/2///61360_4#AAA133
Übergeordnete Klassen:
0112/2///61360_4#AAA131 - trigger device
Klassifizierendes Datenelement:
Merkmale:
Merkmale:
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
.....
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
0112/2///61360_4#AAE751 - anode-gate to anode voltage
Merkmale:
Open all
|
Close all
Übernommene Merkmale:
Übernommene Merkmale:
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
.....
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE724 - trigger device function
0112/2///61360_4#AAE728 - rms on-state current
0112/2///61360_4#AAE729 - repetitive peak on-state current
0112/2///61360_4#AAE730 - non-rep peak on-state current
0112/2///61360_4#AAE732 - gate trigger current
0112/2///61360_4#AAE738 - off-state voltage
0112/2///61360_4#AAE739 - repetitive peak off-state voltage
0112/2///61360_4#AAE740 - rate of rise of off-state voltage
0112/2///61360_4#AAE742 - gate trigger voltage
0112/2///61360_4#AAE743 - thyristor function
0112/2///61360_4#AAE744 - average on-state current
0112/2///61360_4#AAF135 - off-state current
0112/2///61360_4#AAF136 - holding current
0112/2///61360_4#AAF137 - latching current
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
Imported properties:
Instance sharable:
true
Status:
Standard
Is deprecated:
Veröffentlicht in:
IEC 61360-4
Veröffentlicht von:
IEC
Datum des Vorschlags:
2023-04-17
Version, Veranlassungsdatum:
2010-11-11
Version, Freigabedatum:
2010-11-11
Revision release date:
2023-04-17
Gestrichen seit:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
Historie:
Historie:
001-05 (2023-11-22 13:40:01)
standard
分類(クラス)
識別コード:
0112/2///61360_4#AAA136
改訂版:
001
修正刷:
05
IRDI:
0112/2///61360_4#AAA136#001
推奨名:
別名:
コード化された名称:
略称:
定義:
注記:
備考:
翻訳者:
翻訳第 m 版:
翻訳版発行日:
定義出典:
図:
Class type:
ITEM_CLASS
Applicable documents:
Class value assignment:
Requisity of properties:
上位分類:
0112/2///61360_4#AAA133
上位クラス:
0112/2///61360_4#AAA131 - trigger device
分類プロパティ:
プロパティ:
プロパティ:
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
.....
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
0112/2///61360_4#AAE751 - anode-gate to anode voltage
プロパティ:
Open all
|
Close all
継承プロパティ:
継承プロパティ:
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
.....
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE724 - trigger device function
0112/2///61360_4#AAE728 - rms on-state current
0112/2///61360_4#AAE729 - repetitive peak on-state current
0112/2///61360_4#AAE730 - non-rep peak on-state current
0112/2///61360_4#AAE732 - gate trigger current
0112/2///61360_4#AAE738 - off-state voltage
0112/2///61360_4#AAE739 - repetitive peak off-state voltage
0112/2///61360_4#AAE740 - rate of rise of off-state voltage
0112/2///61360_4#AAE742 - gate trigger voltage
0112/2///61360_4#AAE743 - thyristor function
0112/2///61360_4#AAE744 - average on-state current
0112/2///61360_4#AAF135 - off-state current
0112/2///61360_4#AAF136 - holding current
0112/2///61360_4#AAF137 - latching current
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
Imported properties:
Instance sharable:
true
状態:
標準
Is deprecated:
公開:
IEC 61360-4
公開者:
IEC
提案日時:
2023-04-17
初版作成日:
2010-11-11
改訂版公開日:
2010-11-11
Revision release date:
2023-04-17
廃用期日:
Responsible Committee:
IEC/SC 3D
Change request ID:
C00146
版改訂履歴:
版改訂履歴:
001-05 (2023-11-22 13:40:01)
standard
类
代码:
0112/2///61360_4#AAA136
版本号:
001
修订号:
05
IRDI:
0112/2///61360_4#AAA136#001
推荐名:
同义名:
代码名:
短名:
定义:
注释:
备注:
Translator (to be translated in Chinese):
Translation revison (to be translated in Chinese):
Translation revision date (to be translated in Chinese):
定义来源:
图:
类类型:
ITEM_CLASS
适用文档:
Class value assignment:
特性的必要性:
超类:
0112/2///61360_4#AAA133
上层类:
0112/2///61360_4#AAA131 - trigger device
分类DET:
特性:
特性:
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
.....
0112/2///61360_4#AAE300 - repetitive peak reverse voltage
0112/2///61360_4#AAE734 - rate of rise on-state current
0112/2///61360_4#AAE748 - cathode-gate to cathode current
0112/2///61360_4#AAE749 - anode-gate to anode current
0112/2///61360_4#AAE750 - cathode-gate trigger voltage
0112/2///61360_4#AAE751 - anode-gate to anode voltage
特性树:
Open all
|
Close all
Inherited properties:
Inherited properties:
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
.....
0112/2///61360_4#AAE276 - reverse current
0112/2///61360_4#AAE305 - Joule-integral
0112/2///61360_4#AAE331 - diode package
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE724 - trigger device function
0112/2///61360_4#AAE728 - rms on-state current
0112/2///61360_4#AAE729 - repetitive peak on-state current
0112/2///61360_4#AAE730 - non-rep peak on-state current
0112/2///61360_4#AAE732 - gate trigger current
0112/2///61360_4#AAE738 - off-state voltage
0112/2///61360_4#AAE739 - repetitive peak off-state voltage
0112/2///61360_4#AAE740 - rate of rise of off-state voltage
0112/2///61360_4#AAE742 - gate trigger voltage
0112/2///61360_4#AAE743 - thyristor function
0112/2///61360_4#AAE744 - average on-state current
0112/2///61360_4#AAF135 - off-state current
0112/2///61360_4#AAF136 - holding current
0112/2///61360_4#AAF137 - latching current
0112/2///61360_4#AAF275 - junction stress temperature
Is case of:
输入特性:
Instance sharable:
true
状态级别:
Standard (to be translated)
Is deprecated:
发布:
IEC 61360-4
发布者:
IEC
提议日期:
2023-04-17
版本生成日期:
2010-11-11
版本发布日期:
2010-11-11
修订发布日期:
2023-04-17
废止日期:
负责委员会:
IEC/SC 3D
变更请求号:
C00146
版本历史:
版本历史:
001-05 (2023-11-22 13:40:01)
standard
Version history
Historique
Historie
版改訂履歴:
版本历史:
001-05 (2023-11-22 13:40:01)
standard
.....
001-04 (2023-04-17 09:58:33 by BATCH 00001245)
superseded
001-03 (2015-01-20 15:48:48 by BATCH 00000890)
superseded
001-03 (2014-10-16 16:38:19 by BATCH 00000879)
superseded
001-02 (2012-05-30 15:03:07 by BATCH 00000788)
superseded
Web page created
2024-04-29
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2024
IEC
, Geneva, Switzerland. All rights reserved