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CLASS

Code:
0112/2///61360_4#AAA127

Version:
001

Revision:
04

IRDI:
0112/2///61360_4#AAA127#001

Preferred name:
field-effect power transistor

Synonymous name:
power

Coded name:

Short name:
POWT

Definition:
field-effect transistor designed for power-signal applications, having a thermal resistance between junction and mounting base of 15 K/W or less

Note:

Remark:

Definition source:

Drawing:

Class type:
ITEM_CLASS

Applicable documents:

Class value assignment:

Requisity of properties:

Superclass:
0112/2///61360_4#AAA126

Higher level classes:
0112/2///61360_4#AAA118 - transistor

Classifying DET:
0112/2///61360_4#AAF146 - frequency application

Properties:
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAF146 - frequency application

Properties tree:

Open all | Close all



0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE364 - gate type
0112/2///61360_4#AAE366 - channel type
0112/2///61360_4#AAE368 - drain current (dc)
0112/2///61360_4#AAE370 - drain current (dc)
0112/2///61360_4#AAE371 - drain cut-off current
0112/2///61360_4#AAE372 - gate cut-off current
0112/2///61360_4#AAE373 - source cut-off current
0112/2///61360_4#AAE374 - common-mode rejection ratio
0112/2///61360_4#AAE377 - drain-source voltage limit
0112/2///61360_4#AAE379 - drain-substrate voltage limit
0112/2///61360_4#AAE384 - gate-source threshold voltage
0112/2///61360_4#AAE386 - gate-source cut-off voltage
0112/2///61360_4#AAE387 - source-substrate voltage limit
0112/2///61360_4#AAE390 - feedback capacitance
0112/2///61360_4#AAE391 - drain-source on-state resistance
0112/2///61360_4#AAE393 - drain-source on-state resistance
0112/2///61360_4#AAE394 - drain-source off-state resistance
0112/2///61360_4#AAE396 - transfer admittance
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE655 - input capacitance at gate
0112/2///61360_4#AAE656 - transfer conductance
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAE971 - signal handling type
0112/2///61360_4#AAE982 - input capacitance
0112/2///61360_4#AAE983 - output capacitance
0112/2///61360_4#AAF118 - gate-source voltage limit
0112/2///61360_4#AAF275 - junction stress temperature

SuperBlocks:

Is case of:

Imported properties:

Instance sharable:

Status level:
Standard

Is deprecated:

Published in:
IEC 61360-4

Published by:
IEC

Proposal date:
2023-04-17

Version initiation date:
2010-11-11

Version release date:
2011-08-31

Revision release date:
2023-04-17

Obsolete date:

Responsible Committee:
IEC/SC 3D

Change request ID:
C00115


001-04 (2023-04-17 09:58:33 by BATCH 00001245) standard


CLASSE

Code:
0112/2///61360_4#AAA127

Version:
001

Révision:
04

IRDI:
0112/2///61360_4#AAA127#001

Nom préféré:

Nom synonyme:

Nom codé:

Nom court:

Définition:

Note:

Remarque:

Traducteur:

Version de traduction:

Date de traduction:

Source de définition:

Dessin:

Class type:
ITEM_CLASS

Applicable documents:

Class value assignment:

Requisity of properties:

Superclasse:
0112/2///61360_4#AAA126

Classes supérieures:
0112/2///61360_4#AAA118 - transistor

DET de classification:
0112/2///61360_4#AAF146 - frequency application

Propriétés:
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAF146 - frequency application

Propriétés:

Open all | Close all



0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE364 - gate type
0112/2///61360_4#AAE366 - channel type
0112/2///61360_4#AAE368 - drain current (dc)
0112/2///61360_4#AAE370 - drain current (dc)
0112/2///61360_4#AAE371 - drain cut-off current
0112/2///61360_4#AAE372 - gate cut-off current
0112/2///61360_4#AAE373 - source cut-off current
0112/2///61360_4#AAE374 - common-mode rejection ratio
0112/2///61360_4#AAE377 - drain-source voltage limit
0112/2///61360_4#AAE379 - drain-substrate voltage limit
0112/2///61360_4#AAE384 - gate-source threshold voltage
0112/2///61360_4#AAE386 - gate-source cut-off voltage
0112/2///61360_4#AAE387 - source-substrate voltage limit
0112/2///61360_4#AAE390 - feedback capacitance
0112/2///61360_4#AAE391 - drain-source on-state resistance
0112/2///61360_4#AAE393 - drain-source on-state resistance
0112/2///61360_4#AAE394 - drain-source off-state resistance
0112/2///61360_4#AAE396 - transfer admittance
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE655 - input capacitance at gate
0112/2///61360_4#AAE656 - transfer conductance
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAE971 - signal handling type
0112/2///61360_4#AAE982 - input capacitance
0112/2///61360_4#AAE983 - output capacitance
0112/2///61360_4#AAF118 - gate-source voltage limit
0112/2///61360_4#AAF275 - junction stress temperature

Is case of:

Imported properties:

Instance sharable:

Statut:
Standard

Is deprecated:

Publié dans:
IEC 61360-4

Publié par:
IEC

Date de proposition:
2023-04-17

Version, date d'initialisation:
2010-11-11

Version, date de publication:
2011-08-31

Revision release date:
2023-04-17

Date d'obsolescence:

Responsible Committee:
IEC/SC 3D

Change request ID:
C00115


001-04 (2023-04-17 09:58:33 by BATCH 00001245) standard


KLASSE

Code:
0112/2///61360_4#AAA127

Version:
001

Revision:
04

IRDI:
0112/2///61360_4#AAA127#001

Bevorzugter Name:

Synonym:

Code:

Kurzbezeichnung:

Definition:

Notiz:

Bemerkung:

Übersetzer:

Übersetzung, Revision:

Übersetzung, Revisionsdatum:

Quelle der Definition:

Zeichnung:

Class type:
ITEM_CLASS

Applicable documents:

Class value assignment:

Requisity of properties:

Oberbegriff:
0112/2///61360_4#AAA126

Übergeordnete Klassen:
0112/2///61360_4#AAA118 - transistor

Klassifizierendes Datenelement:
0112/2///61360_4#AAF146 - frequency application

Merkmale:
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAF146 - frequency application

Merkmale:

Open all | Close all



0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE364 - gate type
0112/2///61360_4#AAE366 - channel type
0112/2///61360_4#AAE368 - drain current (dc)
0112/2///61360_4#AAE370 - drain current (dc)
0112/2///61360_4#AAE371 - drain cut-off current
0112/2///61360_4#AAE372 - gate cut-off current
0112/2///61360_4#AAE373 - source cut-off current
0112/2///61360_4#AAE374 - common-mode rejection ratio
0112/2///61360_4#AAE377 - drain-source voltage limit
0112/2///61360_4#AAE379 - drain-substrate voltage limit
0112/2///61360_4#AAE384 - gate-source threshold voltage
0112/2///61360_4#AAE386 - gate-source cut-off voltage
0112/2///61360_4#AAE387 - source-substrate voltage limit
0112/2///61360_4#AAE390 - feedback capacitance
0112/2///61360_4#AAE391 - drain-source on-state resistance
0112/2///61360_4#AAE393 - drain-source on-state resistance
0112/2///61360_4#AAE394 - drain-source off-state resistance
0112/2///61360_4#AAE396 - transfer admittance
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE655 - input capacitance at gate
0112/2///61360_4#AAE656 - transfer conductance
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAE971 - signal handling type
0112/2///61360_4#AAE982 - input capacitance
0112/2///61360_4#AAE983 - output capacitance
0112/2///61360_4#AAF118 - gate-source voltage limit
0112/2///61360_4#AAF275 - junction stress temperature

Is case of:

Imported properties:

Instance sharable:

Status:
Standard

Is deprecated:

Veröffentlicht in:
IEC 61360-4

Veröffentlicht von:
IEC

Datum des Vorschlags:
2023-04-17

Version, Veranlassungsdatum:
2010-11-11

Version, Freigabedatum:
2011-08-31

Revision release date:
2023-04-17

Gestrichen seit:

Responsible Committee:
IEC/SC 3D

Change request ID:
C00115


001-04 (2023-04-17 09:58:33 by BATCH 00001245) standard


分類（クラス）

識別コード:
0112/2///61360_4#AAA127

改訂版:
001

修正刷:
04

IRDI:
0112/2///61360_4#AAA127#001

推奨名:

別名:

コード化された名称:

略称:

定義:

注記:

備考:

翻訳者:

翻訳第　m 版:

翻訳版発行日:

定義出典:

図:

Class type:
ITEM_CLASS

Applicable documents:

Class value assignment:

Requisity of properties:

上位分類:
0112/2///61360_4#AAA126

上位クラス:
0112/2///61360_4#AAA118 - transistor

分類プロパティ:
0112/2///61360_4#AAF146 - frequency application

プロパティ:
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAF146 - frequency application

プロパティ:

Open all | Close all



0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE364 - gate type
0112/2///61360_4#AAE366 - channel type
0112/2///61360_4#AAE368 - drain current (dc)
0112/2///61360_4#AAE370 - drain current (dc)
0112/2///61360_4#AAE371 - drain cut-off current
0112/2///61360_4#AAE372 - gate cut-off current
0112/2///61360_4#AAE373 - source cut-off current
0112/2///61360_4#AAE374 - common-mode rejection ratio
0112/2///61360_4#AAE377 - drain-source voltage limit
0112/2///61360_4#AAE379 - drain-substrate voltage limit
0112/2///61360_4#AAE384 - gate-source threshold voltage
0112/2///61360_4#AAE386 - gate-source cut-off voltage
0112/2///61360_4#AAE387 - source-substrate voltage limit
0112/2///61360_4#AAE390 - feedback capacitance
0112/2///61360_4#AAE391 - drain-source on-state resistance
0112/2///61360_4#AAE393 - drain-source on-state resistance
0112/2///61360_4#AAE394 - drain-source off-state resistance
0112/2///61360_4#AAE396 - transfer admittance
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE655 - input capacitance at gate
0112/2///61360_4#AAE656 - transfer conductance
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAE971 - signal handling type
0112/2///61360_4#AAE982 - input capacitance
0112/2///61360_4#AAE983 - output capacitance
0112/2///61360_4#AAF118 - gate-source voltage limit
0112/2///61360_4#AAF275 - junction stress temperature

Is case of:

Imported properties:

Instance sharable:

状態:
標準

Is deprecated:

公開:
IEC 61360-4

公開者:
IEC

提案日時:
2023-04-17

初版作成日:
2010-11-11

改訂版公開日:
2011-08-31

Revision release date:
2023-04-17

廃用期日:

Responsible Committee:
IEC/SC 3D

Change request ID:
C00115


001-04 (2023-04-17 09:58:33 by BATCH 00001245) standard


类

代码:
0112/2///61360_4#AAA127

版本号:
001

修订号:
04

IRDI:
0112/2///61360_4#AAA127#001

推荐名:

同义名:

代码名:

短名:

定义:

注释:

备注:

Translator (to be translated in Chinese):

Translation revison (to be translated in Chinese):

Translation revision date (to be translated in Chinese):

定义来源:

图:

类类型:
ITEM_CLASS

适用文档:

Class value assignment:

特性的必要性:

超类:
0112/2///61360_4#AAA126

上层类:
0112/2///61360_4#AAA118 - transistor

分类DET:
0112/2///61360_4#AAF146 - frequency application

特性:
0112/2///61360_4#AAE336 - mounting base temperature
0112/2///61360_4#AAF146 - frequency application

特性树:

Open all | Close all



0112/2///61360_4#AAE337 - junction temperature
0112/2///61360_4#AAE364 - gate type
0112/2///61360_4#AAE366 - channel type
0112/2///61360_4#AAE368 - drain current (dc)
0112/2///61360_4#AAE370 - drain current (dc)
0112/2///61360_4#AAE371 - drain cut-off current
0112/2///61360_4#AAE372 - gate cut-off current
0112/2///61360_4#AAE373 - source cut-off current
0112/2///61360_4#AAE374 - common-mode rejection ratio
0112/2///61360_4#AAE377 - drain-source voltage limit
0112/2///61360_4#AAE379 - drain-substrate voltage limit
0112/2///61360_4#AAE384 - gate-source threshold voltage
0112/2///61360_4#AAE386 - gate-source cut-off voltage
0112/2///61360_4#AAE387 - source-substrate voltage limit
0112/2///61360_4#AAE390 - feedback capacitance
0112/2///61360_4#AAE391 - drain-source on-state resistance
0112/2///61360_4#AAE393 - drain-source on-state resistance
0112/2///61360_4#AAE394 - drain-source off-state resistance
0112/2///61360_4#AAE396 - transfer admittance
0112/2///61360_4#AAE401 - transistor technology
0112/2///61360_4#AAE487 - frequency band
0112/2///61360_4#AAE490 - modulation method
0112/2///61360_4#AAE494 - nearest conventional type
0112/2///61360_4#AAE637 - transistor package code
0112/2///61360_4#AAE655 - input capacitance at gate
0112/2///61360_4#AAE656 - transfer conductance
0112/2///61360_4#AAE968 - complementary type
0112/2///61360_4#AAE971 - signal handling type
0112/2///61360_4#AAE982 - input capacitance
0112/2///61360_4#AAE983 - output capacitance
0112/2///61360_4#AAF118 - gate-source voltage limit
0112/2///61360_4#AAF275 - junction stress temperature

Is case of:

输入特性:

Instance sharable:

状态级别:
Standard (to be translated)

Is deprecated:

发布:
IEC 61360-4

发布者:
IEC

提议日期:
2023-04-17

版本生成日期:
2010-11-11

版本发布日期:
2011-08-31

修订发布日期:
2023-04-17

废止日期:

负责委员会:
IEC/SC 3D

变更请求号:
C00115


001-04 (2023-04-17 09:58:33 by BATCH 00001245) standard

Version history
Historique
Historie
版改訂履歴:
版本历史:
001-04 (2023-04-17 09:58:33 by BATCH 00001245) standard


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